Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/333
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dc.contributor.authorRath, P-
dc.contributor.authorChai, J C-
dc.contributor.authorZheng, H-
dc.contributor.authorLam, Y C-
dc.contributor.authorMurukeshan, V M-
dc.date.accessioned2006-09-12T10:11:39Z-
dc.date.available2006-09-12T10:11:39Z-
dc.date.issued2006-
dc.identifier.citationInternational Journal of Heat and Mass Transfer, Vol 49, P 3408-3416en
dc.identifier.urihttp://hdl.handle.net/2080/333-
dc.descriptionCopyright for this article belongs to Elsevier.en
dc.description.abstractA total concentration fixed-grid method is used in this article to model the three-dimensional diffusion-controlled wet chemical etching. A total concentration is defined as the sum of the unreacted and the reacted etchant concentrations. The governing mass diffusion equation based on the total concentration includes the interface condition. The reacted concentration of etchant is a measure of the etchfront position. With this approach the etchfront can be found implicitly. For demonstration purposes, the finite-volume method is used to solve the resulting set of governing equations with initial and boundary conditions. The effect of mask thickness on the etchfront surface evolution is studied. The condition at which a three-dimensional etching is converted into two-dimensional is also presented.en
dc.format.extent919581 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoen-
dc.publisherElsevieren
dc.titleTotal Concentration Approach for Three-Dimensional Diffusion-Controlled Wet Chemical Etchingen
dc.typeArticleen
Appears in Collections:Conference Papers

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