RF and Noise performance exploration of Double Gate FinFET

Abstract

Double Gate FinFET devices are suitable for nano electronic circuits due to better scalability, higher on-current (Ion), improved Sub-threshold Slope (SS) and undoped body (no random dopant fluctuation). Body thickness (TSi ) increases the gate control over the channel resulting in reduced short channel effects (SCEs). Thin Tsi increases the quantum confinement of charge, resulting increased threshold-voltage (Vth), and hence, reduced performance. In this work, we have varied the process parameters like channel length (Lg ) in presence of noise and analyzed various parameters. Significant variation in the noise spectral density has been observed, which is related to the random occurrence of excess Lorentzian components (1/f2 -like nature) associated with generation–recombination (GR) noise.