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http://hdl.handle.net/2080/2623| Title: | Effect of Rapid Thermal Annealing on the Structural and Electrical Properties of RF Sputtered CCTO Thin Film |
| Authors: | Tripathy, N Das, K C Ghosh, S P Bose, G Kar, J P |
| Keywords: | RTA X-ray diffraction FESEM C-V measurement |
| Issue Date: | Nov-2016 |
| Citation: | 6th National Conference on Processing and Characterization of Materials, Department of Metallurgical and Materials Engineering, National Institute of Technology Rourkela, Odisha, India, 9-12 December 2016 |
| Abstract: | CaCu3Ti4O12 (CCTO) thin films have been deposited by RF magnetron sputtering on silicon substrates at room temperature. As-deposited thin films were subjected to rapid thermal annealing (RTA) at different temperatures ranging from 850°C to 1000°C. XRD and capacitance - voltage studies indicate that the structural and electrical properties of CCTO thin film strongly depend upon the annealing temperature. XRD pattern of CCTO thin film annealed at 950°C reveals the polycrystalline nature with evolutions of microstructures. Electrical properties of the dielectric films were investigated by fabricating Al/CCTO/Si metal oxide semiconductor structure. Electrical properties were found to be deteriorated with increasing in annealing temperature. |
| Description: | Copyright belongs to the proceeding publisher |
| URI: | http://hdl.handle.net/2080/2623 |
| Appears in Collections: | Conference Papers |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 2016_NCPCM_NTripathy_Effect.pdf | 462.19 kB | Adobe PDF | View/Open |
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