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Title: Effect of Rapid Thermal Annealing on the Structural and Electrical Properties of RF Sputtered CCTO Thin Film
Authors: Tripathy, N
Das, K C
Ghosh, S P
Bose, G
Kar, J P
Keywords: RTA
X-ray diffraction
C-V measurement
Issue Date: Nov-2016
Citation: 6th National Conference on Processing and Characterization of Materials, Department of Metallurgical and Materials Engineering, National Institute of Technology Rourkela, Odisha, India, 9-12 December 2016
Abstract: CaCu3Ti4O12 (CCTO) thin films have been deposited by RF magnetron sputtering on silicon substrates at room temperature. As-deposited thin films were subjected to rapid thermal annealing (RTA) at different temperatures ranging from 850°C to 1000°C. XRD and capacitance - voltage studies indicate that the structural and electrical properties of CCTO thin film strongly depend upon the annealing temperature. XRD pattern of CCTO thin film annealed at 950°C reveals the polycrystalline nature with evolutions of microstructures. Electrical properties of the dielectric films were investigated by fabricating Al/CCTO/Si metal oxide semiconductor structure. Electrical properties were found to be deteriorated with increasing in annealing temperature.
Description: Copyright belongs to the proceeding publisher
Appears in Collections:Conference Papers

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