Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/2623
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dc.contributor.authorTripathy, N-
dc.contributor.authorDas, K C-
dc.contributor.authorGhosh, S P-
dc.contributor.authorBose, G-
dc.contributor.authorKar, J P-
dc.date.accessioned2017-01-17T05:44:03Z-
dc.date.available2017-01-17T05:44:03Z-
dc.date.issued2016-11-
dc.identifier.citation6th National Conference on Processing and Characterization of Materials, Department of Metallurgical and Materials Engineering, National Institute of Technology Rourkela, Odisha, India, 9-12 December 2016en_US
dc.identifier.urihttp://hdl.handle.net/2080/2623-
dc.descriptionCopyright belongs to the proceeding publisheren_US
dc.description.abstractCaCu3Ti4O12 (CCTO) thin films have been deposited by RF magnetron sputtering on silicon substrates at room temperature. As-deposited thin films were subjected to rapid thermal annealing (RTA) at different temperatures ranging from 850°C to 1000°C. XRD and capacitance - voltage studies indicate that the structural and electrical properties of CCTO thin film strongly depend upon the annealing temperature. XRD pattern of CCTO thin film annealed at 950°C reveals the polycrystalline nature with evolutions of microstructures. Electrical properties of the dielectric films were investigated by fabricating Al/CCTO/Si metal oxide semiconductor structure. Electrical properties were found to be deteriorated with increasing in annealing temperature.en_US
dc.subjectRTAen_US
dc.subjectX-ray diffractionen_US
dc.subjectFESEMen_US
dc.subjectC-V measurementen_US
dc.titleEffect of Rapid Thermal Annealing on the Structural and Electrical Properties of RF Sputtered CCTO Thin Filmen_US
dc.typeArticleen_US
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