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Title: Threshold Voltage Modeling of Recessed-Source/Drain (Re-S/D) SOI MOSFETs with Vertical Gaussian Doping Profile
Authors: Kushwaha, M
Saramekala, G K
Tiwari, P K
Keywords: Threshold Voltage Modeling
Vertical Gaussian Doping Profile
Issue Date: Jul-2015
Publisher: Materials Research Society
Citation: 8th International Conference on Materials for Advanced Technologies of the Materials Research, Suntech City, Singapore, 2 July 2015
Abstract: In the present work, an attempt has been made to model the threshold voltage of Re-S/D SOI MOSFETs with vertical Gaussian doping profile in the channel. The two dimensional (2D) Poisson’s equation has been solved in the channel region of the device considering the appropriate boundary conditions. We have adopted the so called “virtual cathode approach” for the threshold voltage modeling. The developed analytical model predicts the threshold voltage of the device for wide variations in the device parameters. To verify the accuracy of the present analytical model, the model results are compared by ATLASTM device simulator.
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