Study of Electronic Properties of RTP Processed p-type MoS2 Films with Various Annealing Temperature

Abstract

Here, molybdenum disulfide (MoS2) thin film has been grown on Si substrates by adopting rapid thermal process (RTP) at 800 ºC for 5 min in presence of hydrogen and argon gas. Thereafter, the p-type doping was carried out using gold (III) chloride (AuCl3) solution. Post-treatment annealing of the doped films was carried out at various annealing temperatures ranging from 200 ºC - 500 ºC. Granular morphology has been revealed with annealing temperature from FESEM study. The increase in intensity of the characteristic XRD peak at 2θ = 14.1°, has been found up to 300 ºC. Distinguished Raman active mode peaks have been seen around 388 cm-1 and 408 cm-1. The carrier concentration has been evaluated employing Mott-Schottky method and has been found to be enhanced at higher annealing temperature. This comparative investigation provides an insightful information about the application of p-doped MoS2 thin films in futuristic semiconductor-based junction devices.