Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/4028
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dc.contributor.authorGartia, Anurag-
dc.contributor.authorKar, Jyoti Prakash-
dc.date.accessioned2023-06-21T13:48:42Z-
dc.date.available2023-06-21T13:48:42Z-
dc.date.issued2023-05-
dc.identifier.citation8th Edition of International Conference on Nanotechnology for Better Living(ICNBL), NIT Srinagar, 25-29 May 2023en_US
dc.identifier.urihttp://hdl.handle.net/2080/4028-
dc.descriptionCopyright belongs to proceeding publisheren_US
dc.description.abstractIn recent years, infrared detectors have been widely used in surveillance, medical diagnosis, remote sensing devices, defence, industrial automation, communication, astronomy, where the advance materials are required to enhance the device performance. Graphene has gained tremendous attention in the field of photonics and electronics because of its numerous outstanding properties like zero bandgap, exceptionally high crystal and electronic quality, high mechanical strength, and electrical conductivity. In the cutting edge of technology, the graphene oxide - molybdenum disulphide hybrid structures have drawn tremendous attention for the development of high efficiency IR detectors, where MoS2 film is used for generation of photoelectrons, and graphene oxide is used to enhance the carrier mobility. In this work, modified Hummer’s method is used for the fabrication of graphene oxide (GO), where reduced graphene oxide (rGO) is obtained by the thermal reduction of GO at 350 °C for 1 hour. The appearance of XRD peak, corresponding to (001) and (002) peaks for GO and rGO, respectively confirms the crystalline nature of the materials. The characteristic Raman peaks of GO and rGO are observed at 1358 cm-1 and 1597 cm-1 , which correspond to the D bands and G bands, respectively. The layered structure of rGO is observed by Scanning electron microscope (SEM) technique. On the other hand, MoS2 film was grown by the sulphonation of sputtered Mo film on silicon substrate (p-type, 1-10 Ω.cm, 525 ± 20 μm). The characteristics XRD peak of MoS2 , corresponding to (002) plane, is observed around 2θ = 14.1° whereas Raman characteristic bands are observed at 386 cm-1 (E1 2g ) and 408 cm-1 (A1g ). Afterwards, rGO layer was deposited on MoS2 thin film. The. Post-deposition morphological and electrical properties of reduced graphene oxide and MoS2 thin film is carried out and co-related for next generation optoelectronic devicesen_US
dc.subjectrGOen_US
dc.subjectHummer’s methoden_US
dc.subjectMoS2en_US
dc.subjectXRDen_US
dc.subjectRamanen_US
dc.titleFabrication and Characterization of Graphene Oxide and Reduced Graphene Oxide On Mos2 Film for IR Detectorsen_US
dc.typeArticleen_US
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