Structural and Optical Study of Pure CuI Thin Film by Horizontal Thermal Evaporation Technique

Abstract

As an intrinsic p-type semiconductor with a wide band gap of 3.1 eV, copper iodide (CuI) has gradually attracted the attention of researchers. γCuI thin films are grown on silicon substrates using a horizontal thermal evaporation system, and the effect of gas flow on CuI thin film properties is thoroughly discussed. The X-ray diffraction (XRD) study confirms its polycrystalline nature and the γphase of CuI. A photoluminescence (PL) measurement system was used to know the optical behavior. The electrical study is done by Hall measurement, and its lowest resistivity is 3 × 10-1 Ω cm with a hole concentration of 3.2 × 1019 cm-3 and mobility of 27 cm2 V-1 s -1 . These results indicate that the high-purity CuI thin film by thermal evaporation can be used in different optoelectronic applications