Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/3475
Title: Ambiguity Free Characterization of Metal-Insulator Transition in Disordered Fermionic Systems
Authors: Sahu, Deepak Kumar
Datta, Sanjoy
Keywords: Metal-Insulator Transition
Disordered Fermionic Systems
Issue Date: Dec-2019
Citation: 64th DAE Solid State Physics Symposium, IIT Jodhpur, Rajasthan, India, 18-22 December 2019
Abstract: Unambiguous characterization of metal insulator transi-tion in disordered system is an important problem. One of the most widely used indicator to do this charac-terization is inverse participation ratio (IPR). IPR can capture the signature of metal insulator transition but it is not free of ambiguity. However, a much more effec-tive and unambiguous approach to identify an insulating or metallic state is to use a localization tensor which is based on the idea of Kohn’s localization. We have stud-ied the one-dimensional Aubry-Andr`e model with cosine modulated disorders. We have used both rational and irrational modulation of the disorder potential to show that it is easier to conclude about the electronic state if localization tensor is used for characterization.
Description: Copyright belongs to proceeding publisher
URI: http://hdl.handle.net/2080/3475
Appears in Collections:Conference Papers

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