|
DSpace@nitr >
National Institue of Technology- Rourkela >
Journal Articles >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/2080/344
|
Full metadata record
| DC Field | Value | Language |
| contributor.author | Rath, P | - |
| contributor.author | Chai, J C | - |
| contributor.author | Zheng, H | - |
| contributor.author | Lam, Y C | - |
| contributor.author | Murukeshan, V M | - |
| date.accessioned | 2006-09-26T09:54:06Z | - |
| date.available | 2006-09-26T09:54:06Z | - |
| date.issued | 2006 | - |
| identifier.citation | Journal of Physics: Conference Series, Vol 34, P 417–422 | en |
| identifier.uri | http://hdl.handle.net/2080/344 | - |
| description | Copyright for this article belongs to Institue of Physics | en |
| description.abstract | A numerical model based on the total concentration of etchant is proposed to model
the wet chemical etching through a circular hole. The reaction at the etchant-substrate interface
is assumed to be infinitely fast i.e. etching is controlled by the diffusion of etchant to the
interface. The proposed model is based on a fixed-grid approach analogous to the enthalpy
method. The total concentration of etchant is the sum of the unreacted etchant concentration
and the reacted etchant concentration. The reacted concentration of etchant is a measure of the
etchfront position during etching. The governing mass diffusion equation based on the total
concentration of etchant includes the interface condition. The etchfront position is found
implicitly using the proposed approach. The computational domain is fixed, which includes the
whole etchant and substrate domain including the mask region. For demonstration purposes,
the finite volume method is used to solve the governing mass diffusion equation with
prescribed initial and boundary conditions. The effect of mask thickness and initial etchant
concentration on the shape evolution of etchfront is studied | en |
| format.extent | 114724 bytes | - |
| format.mimetype | application/pdf | - |
| language.iso | en | - |
| publisher | Institute of Physics | en |
| title | A Numerical Model for Etching through a Circular hole | en |
| type | Article | en |
| Appears in Collections: | Journal Articles
|
Files in This Item:
| File |
Description |
Size | Format |
| iMEMS-2006.pdf | | 112Kb | Adobe PDF | View/Open |
|
Show simple item record
All items in DSpace are protected by copyright, with all rights reserved.
|