|
DSpace@nitr >
National Institue of Technology- Rourkela >
Journal Articles >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/2080/338
|
| Title: | A Fixed-Grid Method for Chemical Etching |
| Authors: | Lam, Y C
Chai, J C
Rath, P
Zheng, H
Murukeshan, V M |
| Issue Date: | Nov-2004 |
| Publisher: | Elsevier |
| Citation: | International Communications in Heat and Mass Transfer, Vol 31, P 1123-1131 |
| Abstract: | This paper presents a fixed-grid method for simulating chemical etching. This method is analogous to the enthalpy method used in the modeling of melting/solidification process. The total concentration of the etchant consists of two components: the unreacted etchant concentration and the reacted etchant concentration. The unreacted etchant concentration is solved in both the solution and the substrate (with zero unreacted etchant concentration). The reacted etchant concentration is used to capture the moving etch front of the solution-substrate interface. As the etch front is computed directly, there is no necessity to compute mesh velocity as for a moving grid approach, which changes a diffusion problem into a convective-diffusion problem. With the proposed approach, a diffusion problem remains a simple diffusion problem. In addition, by using a fixed grid, in contrast with a moving grid, Cartesian grid can be used to capture complicated etchfront in multi-dimensional problems. For ill... |
| Description: | Copyright for this article belongs to Elsevier. |
| URI: | http://hdl.handle.net/2080/338 |
| Appears in Collections: | Journal Articles
|
Files in This Item:
| File |
Description |
Size | Format |
|---|
| rath4.pdf | | 1123Kb | Adobe PDF | View/Open |
|
Show full item record
All items in DSpace are protected by copyright, with all rights reserved.
|
