Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/2866
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dc.contributor.authorPal, Pikesh-
dc.contributor.authorAbdullah, Md. F-
dc.contributor.authorMohapatra, S. R-
dc.contributor.authorKaushik, S. D.-
dc.contributor.authorSingh, A. K-
dc.date.accessioned2018-01-09T04:46:44Z-
dc.date.available2018-01-09T04:46:44Z-
dc.date.issued2017-12-
dc.identifier.citation62nd DAE Solid State Physics Symposium, Mumbai, India, 26 – 30 December, 2017en_US
dc.identifier.urihttp://hdl.handle.net/2080/2866-
dc.descriptionCopyright of this document belongs to proceedings publisher.en_US
dc.description.abstractThe polycrystalline FTO (Fe2TeO6) and FTZO (Fe2Te0.95Zr0.05O6) possessing trirutile tetragonal structure with P42/mnm space group is prepared following solid state reaction route. We have studied the modification in structural, dielectric and magnetic properties of FTO due to 5% Zr doping. Phase confirmation is done by the Reitveld refinement of XRD data and the polycrystalline FESEM micrograph is obtained in both cases. Enhanced dielectric property in FTZO is found relative to FTO. The complex impedance analysis indicates the non-Debye type of relaxation implications and multiple transport mechanism present in both the materials. The room temperature magnetization study shows a typical paramagnetic nature in FTO while in case of FTZO minute opening in the M-H loop is found due to substitution of paramagnetic Zr4+ ion in place of diamagnetic Te6+ in lower field region.en_US
dc.subjectZr Dopingen_US
dc.subjectFe2TeO6en_US
dc.subjectFTZOen_US
dc.titleEffect of Zr Doping on Structural, Dielectric and Magnetic Properties of Fe2TeO6en_US
dc.typePresentationen_US
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