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Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/281

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contributor.authorNanda, J-
contributor.authorMahapatra, P K-
contributor.authorRoy, C L-
date.accessioned2006-05-16T06:26:14Z-
date.available2006-05-16T06:26:14Z-
date.issued2006-
identifier.citationPhysica B: Condensed Matter (Accepted Postprint)en
identifier.urihttp://hdl.handle.net/2080/281-
descriptionCopyright for this article belongs to Elsevier Science Ltd doi:10.1016/j.physb.2006.03.021en
description.abstractA computational model based on non-relativistic approach is proposed for the determination of transmission coefficient, resonant tunneling energies, group velocity, resonant tunneling lifetime and traversal time in multibarrier systems (GaAs/AlyGa1−yAs) for the entire energy range ε<V0, ε=V0 and ε>V0, V0, being the potential barrier height. The resonant energy states were found to group into allowed tunneling bands separated by forbidden gaps. The tunneling lifetime and the traversal time are found to have minimum values at the middle of each allowed band. Further, It is observed that the electrons with energies in the higher tunneling band could tunnel out faster than those with energies in the lower band. Moreover, an additional resonant peak in resonant energy spectrum indicated the presence of a surface state where resonant tunneling occursen
format.extent636938 bytes-
format.mimetypeapplication/pdf-
language.isoen-
publisherElsevieren
subjectMultibarrier resonant tunnelingen
subjectTransmission coefficienten
subjectTunneling lifetimeen
subjectGroup velocityen
subjectTraversal timeen
subjectSurface stateen
titleTransmission coefficient, resonant tunneling lifetime and traversal time in multibarrier semiconductor heterostructureen
typeArticleen
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