R-curve behavior of Ti3SiC2

Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/279

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DC Field	Value	Language
dc.contributor.author	Sarkar, D	-
dc.contributor.author	Basu, B	-
dc.contributor.author	Chu, Min Cheol	-
dc.contributor.author	Cho, Seong Jai	-
dc.date.accessioned	2006-04-24T04:28:37Z	-
dc.date.available	2006-04-24T04:28:37Z	-
dc.date.issued	2006	-
dc.identifier.citation	Ceramics International, (Accepted Postprint)	en
dc.identifier.uri	http://hdl.handle.net/2080/279	-
dc.description	Copyright for this article belongs to Elsevier Science Ltd http://dx.doi.org/10.1016/j.ceramint.2006.01.002	en
dc.description.abstract	One of the characteristic material properties for many of the high toughness ceramics (ZrO2, Sialon, etc.) is the enhanced resistance to crack growth during crack extension, a phenomenon known as ‘R-curve behavior’. Herein, we report, the crack growth resistance/R-curve behavior of Ti3SiC2. The crack growth resistance property of Ti3SiC2 is experimentally measured using single-edge-precrack-notched beam (SEPB) method. At room temperature, the flexural tests of hot pressed Ti3SiC2 bars are performed under 4-point bending mode and the precrack length is varied in our experiments. Additionally, the fracture toughness/crack growth resistance behavior as well as fracture mechanisms of Ti3SiC2 are explained on the basis of microstructure and bonding in Ti3SiC2. SEM investigation reveals significant crack wake bridging, which is a characteristic feature of many high toughness damage-tolerant ceramic	en
dc.format.extent	617158 bytes	-
dc.format.mimetype	application/pdf	-
dc.language.iso	en	-
dc.publisher	Elsevier	en
dc.subject	Ti3SiC	en
dc.subject	SEPB	en
dc.subject	R-curve	en
dc.title	R-curve behavior of Ti3SiC2	en
dc.type	Article	en
Appears in Collections:	Journal Articles

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