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Title: A Two-Dimensional Subthreshold Current Model of Recessed-Source/ Drain (Re- S/D) SOI MOSFETs with High-k Dielectric
Authors: Saramekala, G K
Tiwari, P K
Keywords: recessed-source
drain (Re-S/D)
subthreshold current;
mimimum surface potential
gate dielectric constant
Issue Date: Sep-2014
Publisher: Asia Modelling Symposium
Citation: Eighth Asia International conference on Mathematical Modelling and Computer Simulation, Asia Modelling Symposium , 23 September 2014.Taipei
Abstract: An analytical surface-potential based subthreshold current model for short-channel recessed-source/ drain (Re-S/D) SOI MOSFETs with high-k dielectric is presented in this paper. The two-dimensional (2D) Poisson’s equation has been solved in the channel region with suitable boundary conditions in order to determine the surface potential. The diffusion component of current density is considered for the subthreshold current modeling. The impact of EOT (Effective Oxide Thickness) ( ox t ), channel Length ( L ), gate-dielectric constant ( o x ) on subthreshold current has been investigated. The proposed model has been validated by comparing the analytical results with numerical simulation data obtained from ATLASTM, a two dimensional device simulator from SILVACO.
Description: Copyright belongs to Proceeding publishers
Appears in Collections:Conference Papers

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