Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorVishwakarma, P N-
dc.identifier.citationSolid State Communications 149 (2009) 115-120en
dc.descriptionCopyright for this paper belongs to the Elsevier Ltd.en
dc.description.abstractExperimental results on frequency and temperature dependence of ac conduction in boron doped amorphous carbon films are analyzed in the framework of available microscopic models. Depending on the response, the conductivity plot is divided into three regimes (low frequency high temperature; moderate frequency intermediate temperature; high frequency low temperature) and the data in the respective regimes are corroborated with the various theoretical models accordingly. The conductivity data at high frequency and low temperature suggests that relaxation via quantum mechanical tunneling might be the dominant conduction mechanism. At intermediate temperatures and moderate frequencies, the conductivity data is in good agreement with extended pair approximation model with interaction correction. Signature of enhanced interaction effect is observed at low temperature.en
dc.format.extent3825351 bytes-
dc.publisherElsevier Ltd.en
dc.subjectDisordered systemsen
dc.subjectThin filmsen
dc.subjectElectron-electron interactionsen
dc.titleAc conductivity in boron doped amorphous carbon filmsen
Appears in Collections:Journal Articles

Files in This Item:
File Description SizeFormat 
SSC_final.pdf743.89 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.