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Title: An Analytical Surface Potential Modeling of Fully-Depleted Symmetrical Double-Gate (DG) Strained-Si MOSFETs Including the Effect of Interface Charges
Authors: Sarangi, S
Santra, A
Bhushan, S
Gopi Krishna, S
Dubey, S
Tiwari, P K
Keywords: Carrier mobility
Double Gate (DG)
Drain Induced Barrier Lowering (DIBL)
Hot Carrier Effect (HCE)
Issue Date: Apr-2013
Citation: 2nd student conference of Engineering and system(SCES-2013) April-12-14, Motilal Nehru National Institute of Technology Allahabad
Abstract: A two-dimensional (2D) surface potential model for a fully-depleted symmetrical double-gate strained- Si MOSFET damaged with oxide interface charges is being proposed. The damage due to the hot carrier effect, is a common phenomenon in short-channel devices. The parabolic potential approximation is utilized to solve 2D Poisson’s equation in the channel region. The developed surface potential model incorporates the effect of both positive as well as negative interface charges. The effects of interface charge density, extent of the damaged region and the strain variations in the channel region on the surface potential have been studied comprehensively. The model results are in reasonable agreement with simulation results of ATLASTM, a numerical simulator by Silvaco Inc.
Description: Copyright belongs to proceeding publisher
Appears in Collections:Conference Papers

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