Please use this identifier to cite or link to this item:
Title: Fabrication of aligned ZnO nanoplatelets using AlN film as an interfacial layer
Authors: Ghosh, S P
Das, K C
Kar, J P
Das, S N
Bose, G
Myoung, J M
Keywords: ZnO
AlN films
Issue Date: Dec-2012
Citation: 17th National Conference on Ferroelectrics and Dielectrics (NSFD-2012) held at Dept. of Physics, ITER, SOA University, Bhubaneswar during 17-19 December 2012
Abstract: Vertically aligned ZnO nanoplatelets were grown by aqueous chemical growth (ACG) method using aluminum nitride (AlN) film as an interfacial layer on silicon wafer; whereas, ZnO nanorods were grown by the identical process on the bare silicon wafer. Prior to ZnO nanostructure growth, the morphological properties of the RF sputtered AlN films were systematically studied. The thin nanoplatelets, grown on the AlN surface, have hexagonal shape with flat surface. The thickness and diameters of the nanoplatelets were 50-80 nm and 2 μm, respectively. The morphological and microstructural properties of the nanoplatelets were evaluated by SEM, TEM and XRD characterization techniques. The formation of nanoplatelets on the surface of AlN film is due to the presence of aluminum complexes.
Description: Copyright belongs to proceeding publisher
Appears in Collections:Conference Papers

Files in This Item:
File SizeFormat 
Fabrication.pdf344.35 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.