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Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/1023

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contributor.authorBadapanda, T-
contributor.authorRout, S K-
contributor.authorPanigrahi, S-
contributor.authorSinha, T P-
date.accessioned2009-08-28T09:37:27Z-
date.available2009-08-28T09:37:27Z-
date.issued2008-
identifier.citationCurrent Applied Physics, Volume 9, 2009, Pages 727-731en
identifier.urihttp://dx.doi.org/:10.1016/j.cap.2008.06.014-
identifier.urihttp://hdl.handle.net/2080/1023-
description.abstractPerovskite types Ba1xBi2x/3Ti0.75Zr0.25O3 (with x = 0.0, 0.025, 0.05) ceramics have been prepared through solid state reaction route. The room temperature XRD study suggests that all the compositions have single phase cubic symmetry with space group Pm-3m. Temperature dependent dielectric studies of the ceramics have been investigated in the frequency range of 50 Hz–1 MHz. The densities of the samples are determined using Archimedes’ principle and found to be 98% of X-ray density. The dielectric study revealed diffuse phase transition of second order. A broad dielectric anomaly coupled with the shift of dielectric maxima toward a higher temperature with increasing frequency indicates the relaxor-type behavior in the ceramics. The diffusivity increases with increase in Bi contents in the studied composition range. The transition temperature decreases with increase in Bi contents due to the decrease in grain size.en
format.extent500939 bytes-
format.mimetypeapplication/pdf-
language.isoen-
publisherElsevieren
subjectElectroceramicsen
subjectBarium titanate–zirconateen
subjectPerovskitesen
titlePhase Formation and Dielectric Study of Bi Doped BaTi0.75Zr0.25O3 Ceramicen
typeArticleen
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