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ATLASTM based simulation study of the electrical characteristics of dual-metal-gate (DMG) fullydepleted (FD) recessed-source/drain (Re-S/D) SOI MOSFETs 992

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ATLASTM based simulation study of the electrical characteristics of dual-metal-gate (DMG) fullydepleted (FD) recessed-source/drain (Re-S/D) SOI MOSFETs 0 0 0 0 0 4 20

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