Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/5442
Title: Molecular Dynamics Study of Coalescence Behavior of InGaN Nanoparticles in Homogeneous and Heterogeneous Phase by Sintering
Authors: Debnath, Anuj
Das, Chandan K
Keywords: Molecular dynamics
High electron mobility transistor
Issue Date: Dec-2025
Citation: Statistical Mechanics in Chemistry and Biology Conference (SMCB), TIFR Hyderabad, 17–19 December 2025
Abstract: Sintering, a thermally activated consolidation process, densifies discrete particles into continuous structures via atomic-scale mass transport below the melting point. Here, we employ large-scale molecular dynamics (MD) simulations to systematically elucidate the coalescence and neck growth mechanisms of In₀.₁Ga₀.₉N nanoparticles in both homogeneous wurtzite–wurtzite and heterogeneous wurtzite–zincblende phase configurations. Simulations were conducted using the Stillinger–Weber1 potential across nanoparticle pairs of varying size and temperatures (Fig. 1). Mean-squared displacement analysis reveals enhanced diffusivity in Zb-phase atoms, while heterogeneous systems exhibit higher shrinkage ratios that intensify with particle size reduction. Common neighbor analysis indicates a pronounced Wz phase transformation in Zb nanoparticles below 25 Å, accompanied by microcrystalline Wz domains on larger Zb surfaces. Dislocation extraction analysis2 further identifies defect evolution within the neck. The neck growth kinetics adheres to a power-law relation with time, consistent with classical sintering theory3, thereby validating the atomistic modelling.
Description: Copyright belongs to the proceeding publisher.
URI: http://hdl.handle.net/2080/5442
Appears in Collections:Conference Papers

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