Synthesis of Temperature-Dependent Characteristics of Thermally Evaporated Copper Iodide Film

Abstract

In recent years, scientific groups are paying a great deal of attention for the development of heterostructure devices. This article describes the methodology for the fabrication of copper iodide (CuI) films on silicon (Si) substrates using the horizontal thermal evaporation approach. Due to its p-type semiconductor properties, CuI is a promising material for use in optoelectronic devices in the future. The synthesis of the CuI/Si heterojunction was carried out at temperatures ranging from room temperature to 230 °C. The structural, morphological, optical, and electrical analyses of the samples have been carried out for different substrate temperatures. CuI films have shown a polycrystalline character and have lattice parameters of 6.03 Å. The surface roughness was measured using the atomic force microscope. The Hall effect measurement revealed that the CuI films were p-type. With a carrier concentration of 1019 cm-3 , the sample synthesized at 130 °C, has shown the highest mobility of 83.12 cm2 V-1 s -1 . The UV-visible spectroscopic study demonstrate that the CuI thin films have good UV light absorption. The IV measurements have shown that the CuI/Si heterojunctions are rectifying, and the junction property is modulated by photo-exposure.