Dielectric properties of acceptor doped SrTiO3 ceramics

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DC Field	Value	Language
dc.contributor.author	Rout, S K	-
dc.contributor.author	Bera, J	-
dc.date.accessioned	2005-05-26T11:24:24Z	-
dc.date.available	2005-05-26T11:24:24Z	-
dc.date.issued	2004	-
dc.identifier.citation	Indian Journal of Physics, Vol 78, Iss 8, P 819-822	en
dc.identifier.uri	http://hdl.handle.net/2080/46	-
dc.description	Copyright of this article belongs to IACS, India	en
dc.description.abstract	0.5 atom % Ni-doped SrTiO3 was prepared by solid-state reaction route. Average grain sizes of un-doped and doped samples were 1.3 and 4.1 micron respectively. Relative permittivity of ST ceramics was found to increase with Ni-doping. Capacitance was measured at temperatures ranging from 4000 to 7000C in the frequency range 10 Hz to 13 MHz. Grain and grain boundaries relaxation frequencies were shifted to higher frequency with temperature. Impedance measurements were conducted at 4000C to separate grain and grain-boundary contributions. Bulk and grain-boundary resistance were evaluated from impedance complex plain plot. Bulk resistance of doped and un-doped ST ceramics was more or less same. Single grain boundary resistance of doped sample was higher than un-doped one, indicating GB resistance increases with acceptor doping.	en
dc.format.extent	303043 bytes	-
dc.format.mimetype	application/pdf	-
dc.language.iso	en	-
dc.publisher	IACS, India	en
dc.subject	Ni doped SrTiO3	en
dc.subject	Dielectric properties	en
dc.subject	Impedance spectroscopy	en
dc.subject	Grain-boundary	en
dc.title	Dielectric properties of acceptor doped SrTiO3 ceramics	en
dc.type	Article	en
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