Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/4586
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dc.contributor.authorMuduli, Sakti Prasanna-
dc.contributor.authorMuduli, Rama Chandra-
dc.contributor.authorKale, Paresh-
dc.date.accessioned2024-06-20T05:44:40Z-
dc.date.available2024-06-20T05:44:40Z-
dc.date.issued2024-05-
dc.identifier.citation13th edition of the Porous Semiconductors-Science and Technology Conference, 28 April to 2nd May 2024, OREA Congress Hotel Brno, Brno, Czech Republicen_US
dc.identifier.urihttp://hdl.handle.net/2080/4586-
dc.descriptionCopyright belongs to proceeding publisheren_US
dc.description.abstractThe hydrogen desorption from widely studied metal hydrides requires high temperatures (> 400 ℃), a significant bottle-neck for cyclic storage. Despite the advantage of porous materials with large surface areas, hydrogen desorption from the adsorbed surface is rarely reported. The work investigates and analyzes the thermal desorption of hydrogen-terminated porous silicon (PS) surface using Attenuated Total Reflectance-Fourier Transform Infrared Spectroscopy (ATR-FTIR) to optimize the temperature for efficient desorption, as the FTIR is sensitive to identify the presence of Si hydride species. The relative peak intensities in the spectra estimate the relative hydride (Si-Hx) terminations for desorption rates. The work suggests a hydrogen desorption mechanism explaining the temperature effect. The analysis designates 100 °C as the critical temperature for the desorption, whereas 250 °C is the optimized temperature for efficient desorption from PS. The desorption temperature optimization may facilitate the use of PS for cyclic hydrogen storage onboard applications.en_US
dc.subjectHydrogenated Porous Siliconen_US
dc.subjectThermal Desorptionen_US
dc.titleOptimization of Thermal Desorption from Hydrogenated Porous Siliconen_US
dc.typePresentationen_US
Appears in Collections:Conference Papers

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