Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/4027
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dc.contributor.authorBiswal, Sameer Ranjan-
dc.contributor.authorKar, Jyoti Prakash-
dc.date.accessioned2023-06-21T13:43:41Z-
dc.date.available2023-06-21T13:43:41Z-
dc.date.issued2023-05-
dc.identifier.citation8th Edition of International Conference on “Nanotechnology for Better Living” (ICNBL), NIT Srinagar, 25-29 May 2023en_US
dc.identifier.urihttp://hdl.handle.net/2080/4027-
dc.descriptionCopyright belongs to proceeding publisheren_US
dc.description.abstractAs an intrinsic p-type semiconductor with a wide band gap of 3.1 eV, copper iodide (CuI) has gradually attracted the attention of researchers. γCuI thin films are grown on silicon substrates using a horizontal thermal evaporation system, and the effect of gas flow on CuI thin film properties is thoroughly discussed. The X-ray diffraction (XRD) study confirms its polycrystalline nature and the γphase of CuI. A photoluminescence (PL) measurement system was used to know the optical behavior. The electrical study is done by Hall measurement, and its lowest resistivity is 3 × 10-1 Ω cm with a hole concentration of 3.2 × 1019 cm-3 and mobility of 27 cm2 V-1 s -1 . These results indicate that the high-purity CuI thin film by thermal evaporation can be used in different optoelectronic applicationsen_US
dc.subjectCuI Thin Filmen_US
dc.subjectHorizontal Thermal Evaporationen_US
dc.titleStructural and Optical Study of Pure CuI Thin Film by Horizontal Thermal Evaporation Techniqueen_US
dc.typeArticleen_US
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