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DC Field | Value | Language |
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dc.contributor.author | Biswal, Sameer Ranjan | - |
dc.contributor.author | Kar, Jyoti Prakash | - |
dc.date.accessioned | 2023-06-21T13:43:41Z | - |
dc.date.available | 2023-06-21T13:43:41Z | - |
dc.date.issued | 2023-05 | - |
dc.identifier.citation | 8th Edition of International Conference on “Nanotechnology for Better Living” (ICNBL), NIT Srinagar, 25-29 May 2023 | en_US |
dc.identifier.uri | http://hdl.handle.net/2080/4027 | - |
dc.description | Copyright belongs to proceeding publisher | en_US |
dc.description.abstract | As an intrinsic p-type semiconductor with a wide band gap of 3.1 eV, copper iodide (CuI) has gradually attracted the attention of researchers. γCuI thin films are grown on silicon substrates using a horizontal thermal evaporation system, and the effect of gas flow on CuI thin film properties is thoroughly discussed. The X-ray diffraction (XRD) study confirms its polycrystalline nature and the γphase of CuI. A photoluminescence (PL) measurement system was used to know the optical behavior. The electrical study is done by Hall measurement, and its lowest resistivity is 3 × 10-1 Ω cm with a hole concentration of 3.2 × 1019 cm-3 and mobility of 27 cm2 V-1 s -1 . These results indicate that the high-purity CuI thin film by thermal evaporation can be used in different optoelectronic applications | en_US |
dc.subject | CuI Thin Film | en_US |
dc.subject | Horizontal Thermal Evaporation | en_US |
dc.title | Structural and Optical Study of Pure CuI Thin Film by Horizontal Thermal Evaporation Technique | en_US |
dc.type | Article | en_US |
Appears in Collections: | Conference Papers |
Files in This Item:
File | Description | Size | Format | |
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2023_ICNBL_SRBiswal_Structural.pdf | Poster | 1.21 MB | Adobe PDF | View/Open |
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