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http://hdl.handle.net/2080/3472
Title: | Beyond 4% Photo Conversion Efficiency Achieved by Low Temperature Phase Selective Solvothermally Synthesized CZTS (Cu2ZnSnS4) Quantum Dot Solar Cell |
Authors: | Das, Sonali Mahanandia, Pitamber |
Keywords: | Photo conversion CZTS Photovoltaic cell |
Issue Date: | Dec-2019 |
Citation: | 64th DAE Solid State Physics Symposium, IIT Jodhpur, Rajasthan, India, 18-22 December 2019 |
Abstract: | CZTS (Cu2ZnSnS4) nanoparticle/quantum dot ink prepared by solution based method offers an alternative effective route for the fabrication of earth abundant CZTS photovoltaic absorber layer. Herein, we report an efficient kesterite CZTS solar cell with device configuration of SLG/Mo/CZTS QDs/CdS/ZnO/Al beyond 4% photo conversion efficiency (PCE), fabricated by a modest solution processed non-toxic, environment friendly and low cost method with absorber thickness less than 1µm. The fabricated CZTS quantum dot absorber based photovoltaic device showed active area PCE of 4.26% under AM1.5 illuminations with current density (Jsc) of 18.2 mA/cm |
Description: | Copyright belongs to proceeding publisher |
URI: | http://hdl.handle.net/2080/3472 |
Appears in Collections: | Conference Papers |
Files in This Item:
File | Description | Size | Format | |
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2019_DAE-SPSS_Poster_SDas_Beyond.pdf | Poster | 1.24 MB | Adobe PDF | View/Open |
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