Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/3472
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dc.contributor.authorDas, Sonali-
dc.contributor.authorMahanandia, Pitamber-
dc.date.accessioned2020-01-16T13:59:25Z-
dc.date.available2020-01-16T13:59:25Z-
dc.date.issued2019-12-
dc.identifier.citation64th DAE Solid State Physics Symposium, IIT Jodhpur, Rajasthan, India, 18-22 December 2019en_US
dc.identifier.urihttp://hdl.handle.net/2080/3472-
dc.descriptionCopyright belongs to proceeding publisheren_US
dc.description.abstractCZTS (Cu2ZnSnS4) nanoparticle/quantum dot ink prepared by solution based method offers an alternative effective route for the fabrication of earth abundant CZTS photovoltaic absorber layer. Herein, we report an efficient kesterite CZTS solar cell with device configuration of SLG/Mo/CZTS QDs/CdS/ZnO/Al beyond 4% photo conversion efficiency (PCE), fabricated by a modest solution processed non-toxic, environment friendly and low cost method with absorber thickness less than 1µm. The fabricated CZTS quantum dot absorber based photovoltaic device showed active area PCE of 4.26% under AM1.5 illuminations with current density (Jsc) of 18.2 mA/cmen_US
dc.subjectPhoto conversionen_US
dc.subjectCZTS Photovoltaic cellen_US
dc.titleBeyond 4% Photo Conversion Efficiency Achieved by Low Temperature Phase Selective Solvothermally Synthesized CZTS (Cu2ZnSnS4) Quantum Dot Solar Cellen_US
dc.typePresentationen_US
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