Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/3472
Title: Beyond 4% Photo Conversion Efficiency Achieved by Low Temperature Phase Selective Solvothermally Synthesized CZTS (Cu2ZnSnS4) Quantum Dot Solar Cell
Authors: Das, Sonali
Mahanandia, Pitamber
Keywords: Photo conversion
CZTS Photovoltaic cell
Issue Date: Dec-2019
Citation: 64th DAE Solid State Physics Symposium, IIT Jodhpur, Rajasthan, India, 18-22 December 2019
Abstract: CZTS (Cu2ZnSnS4) nanoparticle/quantum dot ink prepared by solution based method offers an alternative effective route for the fabrication of earth abundant CZTS photovoltaic absorber layer. Herein, we report an efficient kesterite CZTS solar cell with device configuration of SLG/Mo/CZTS QDs/CdS/ZnO/Al beyond 4% photo conversion efficiency (PCE), fabricated by a modest solution processed non-toxic, environment friendly and low cost method with absorber thickness less than 1µm. The fabricated CZTS quantum dot absorber based photovoltaic device showed active area PCE of 4.26% under AM1.5 illuminations with current density (Jsc) of 18.2 mA/cm
Description: Copyright belongs to proceeding publisher
URI: http://hdl.handle.net/2080/3472
Appears in Collections:Conference Papers

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