Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/3471
Full metadata record
DC FieldValueLanguage
dc.contributor.authorSamoju, Visweswara Rao-
dc.contributor.authorSaramekala, Gopi Krishna-
dc.contributor.authorTiwari, Pramod Kumar-
dc.contributor.authorSwain, Ayas Kanta-
dc.contributor.authorMahapatra, Kamalakanta-
dc.date.accessioned2020-01-16T13:57:46Z-
dc.date.available2020-01-16T13:57:46Z-
dc.date.issued2019-12-
dc.identifier.citationIEEE International Symposium on Smart Electronic Systems(IEEE-iSES), Rourkela, India, 16-18 December 2019en_US
dc.identifier.urihttp://hdl.handle.net/2080/3471-
dc.descriptionCopyright belongs to proceeding publisheren_US
dc.description.abstractThis paper presents analytical modeling and simulation of output current-voltage characteristics, output conductance, and transconductance of dual metal quadruple gate (DMQG) MOSFET. With the help of above said characteristics, this work analyzes the drain current and analog characteristics dependence on device parameters such as gate length ratio and work function ratios. The results of the modeling are compared with those obtained by a 3D ATLAS device simulator to verify the accuracy of the proposed model. Finally, it is observed that the optimum performance of a fixed channel length device is possible with higher control gate length than the screen gate length.en_US
dc.subjectQuadruple Gate (QG)en_US
dc.subjectDual Metal (DM)en_US
dc.subjectTransconductance (𝒈𝒎)en_US
dc.subjectDrain conductance (𝒈𝒅)en_US
dc.subjectControl gateen_US
dc.subjectScreen gateen_US
dc.titleModeling of Drain Current and Analog Characteristics of Dual-Metal Quadruple Gate (DMQG) MOSFETSen_US
dc.typeArticleen_US
Appears in Collections:Conference Papers

Files in This Item:
File Description SizeFormat 
2019_IEEE-iSES_VRSamoju_Modelling.pdf719.64 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.