Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/3445
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dc.contributor.authorPradhan, Diana-
dc.contributor.authorGhosh, Surya P.-
dc.contributor.authorBose, Gouranga-
dc.contributor.authorKar, J.P.-
dc.date.accessioned2020-01-03T11:11:37Z-
dc.date.available2020-01-03T11:11:37Z-
dc.date.issued2019-12-
dc.identifier.citation20th IWPSD 2019,December 17-20en_US
dc.identifier.urihttp://hdl.handle.net/2080/3445-
dc.descriptionThe copy right of this document belongs to the Proceedings publisher.en_US
dc.description.abstractMinimization of conventional semiconductor materials is hindered due to the defects and un controlable bandgap variation. To address these issues, 2Dtransition metaldichalcogenides(TMDC) has been explored rapidly. Among the discovered TMDCs, molybdenum disulphide(MoS2) has gained attention due to their remarkable structural ,optical , electrical and mechanical properties, which makes it a suitable candidate for the future electronic and optoelectronic devices. In this work, molybdenum(Mo) thin films were deposited on cleaned silicon substrates by RF sputtering technique at a power of 100W for 30sec. A layer of sulphur was deposited using thermal evaporation technique. Thereafter, two sulphur coated Mo/Si samples were kept facing each other inside a rapid heat treatment furnace. The samples were treated at 800 °C for 5 mins in Ar+H2 ambient. The structural and optical properties of MoS2 layers were studied by X-Ray diffraction, Raman and PL spectroscopy. In order to carry out the electrical measurements, MoS2/Si p-n heterojunction was fabricated. The junction and semiconductor properties were evaluated by current-voltage and capacitance-voltage measurements. In order to evaluate the sensing property of MoS2 thin films, a detector setup based on Arduino UNO micro-controller is designed. The hardware setup is associated with a LED (light emitting diode) detector and GSM (Global System for Mobile) unit, which sends a message when the measured current exceeds the threshold value.en_US
dc.subjectTransition metal dichalcogenideen_US
dc.subjectMolybdenum disulfideen_US
dc.subjectRaman spectraen_US
dc.subjectHeterojunctionen_US
dc.subjectPhotodetectoren_US
dc.titleFabrication of MoS2thin films by sulphonation of sputtered Mo thin filmsen_US
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