Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/3315
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dc.contributor.authorC, Ramkumar-
dc.contributor.authorMallik, Archana-
dc.date.accessioned2019-07-17T05:36:27Z-
dc.date.available2019-07-17T05:36:27Z-
dc.date.issued2019-07-
dc.identifier.citation26th International Symposium on Metastable, Amorphous and Nanostructured Materials (ISMANAM 2019), Chennai, India, 08-12 July 2019en_US
dc.identifier.urihttp://hdl.handle.net/2080/3315-
dc.descriptionCopyright of this document belongs to proceedings publisher.en_US
dc.description.abstractCopper indium selenide (CuInSe2 or CIS) thin films were electrodeposited on FTO substrates by co-electrodeposition of Cu-In-Se precursor thin films using an electrolyte comprised of Citric acid-SDS. By the addition of SDS, the formation of CIS nanoislands were avoided which can create compositional non-uniformity. They were further annealed at 400 ˚C in nitrogen atmosphere. The structural, compositional, optical and electronic characterization of asdeposited and annealed CIS thin films were investigated by XRD, Raman, FE-SEM/EDAX, UV-VIS spectroscopy and electrochemical analysis. With an optical bandgap of approximately 1 eV, the annealed CIS thin film exhibited a p-type behavior with excellent photoelectrochemical properties.en_US
dc.subjectPhoto-electrochemical behavioren_US
dc.subjectCIGSen_US
dc.subjectSolar thin filmsen_US
dc.subjectCISe/Ga-Seen_US
dc.subjectElectrochemical stack approachen_US
dc.titlePhoto-electrochemical behavior of CIGS solar thin films prepared through a novel CISe/Ga-Se two–step electrochemical stack approachen_US
dc.typeArticleen_US
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