Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/3114
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dc.contributor.authorPradhan, Diana-
dc.contributor.authorGhosh, Surya Prakash-
dc.contributor.authorTripathy, Nilakantha-
dc.date.accessioned2018-12-06T11:55:41Z-
dc.date.available2018-12-06T11:55:41Z-
dc.date.issued2018-11-
dc.identifier.citationIEEE Electron Device Kolkata Conference ( EDKCON 2018 ), Kolkata, India, 24-25 November, 2018en_US
dc.identifier.urihttp://hdl.handle.net/2080/3114-
dc.descriptionCopyright of this document belongs to proceedings publisher.en_US
dc.description.abstractTremendous downscaling of well known semiconductor materials has resulted in various demerits like, defects at the interface and variation in bandgap. In order to overcome these challenges, the beyond graphene area of material science has been explored rapidly with the discovery of transition metal dichalcogenides (TMDC). Among TMDC, molybdenum disulphide (MoS2) has drawn tremendous attention for their excellent structural, optical, electrical and mechanical properties, which makes it suitable for the use in next generation electronic and optoelectronic devices. Initially, molybdenum (Mo) thin films were grown on silicon by RF sputtering technique at 45 W. Afterwards, sulphonation of Mo was carried out using a custom designed two zone tubular chemical vapor deposition (CVD) system. In order to optimize the growth temperature, the temperature of higher heating zone of CVD system was varied from 650 °C to 850 °C. The structural, morphological and optical studies reveal that the higher temperature is favorable for the growth of MoS2 layers.en_US
dc.subjectChemical vapor depositionen_US
dc.subjectMolybdenum disulphideen_US
dc.subjectRaman spectroscopyen_US
dc.subjectTransition metal dichalcogenidesen_US
dc.titleEffect of process temperature on molybdenum disulphide layers grown by chemical vapor deposition techniqueen_US
dc.typeArticleen_US
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