Synthesis and Characterization of NanoporousTiO2thin Films by Dip Coating Method

Abstract

TiO2 thin films were coated on p-Si(100) substrate by sol gel dip coating method by varying the dipping rate from 1 cm / min to 4 cm / min. All samples were annealed at 500ºC for one hour in air atmosphere. Porous surface morphology has been observed from the FESEM micrographs. X-ray diffraction (XRD) pattern has confirmed the anatase phase for all the samples. The formation of titania in the anatase form was confirmed by FTIR study. Al / TiO2 / SiMOS structures were fabricated for electrical measurements. Oxide charge density (Qox) was calculated from the shifts in flat band voltage and was found to be increasing with dippin rate. Inter face trap density (Dit) was calculated as 8.3×1011eV-1cm-2 for dipping rate of 4cm/min. The leakage current was found to be rapidly increased for lower gate voltage and after wards it became quasi saturated.