Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/2773
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dc.contributor.authorSahoo, Mihir Kumar-
dc.contributor.authorKar, J P-
dc.contributor.authorKale, Paresh G-
dc.date.accessioned2017-10-18T10:34:30Z-
dc.date.available2017-10-18T10:34:30Z-
dc.date.issued2017-09-
dc.identifier.citation33rd European Photovoltaic Solar Energy Conference and Exhibition(EU PVSEC), RAI Convention & Exhibition Centre, Amsterdam, The Netherlands, 25-29 September 2017en_US
dc.identifier.urihttp://hdl.handle.net/2080/2773-
dc.descriptionCopyright of this article is with proceedings publisheren_US
dc.description.abstractFabrication of the third generation photovoltaic (PV) solar cell uses thin film deposition technique to deposit dielectrics such as SiO2, Si3N4, SiC, and SiOx. The layer works as a barrier layer, capping layer, tunneling medium, and an intermediate i- layer in the p-i-n structure solar cell. Control of physical parameters and morphology of thin film layer is essential for the synthesis of the quantum dots PV solar cell. The presented work use sputtering as deposition technique to fabricate SRO/SiO2 multilayers on controlling the deposition parameters RF power, gas flow rate, and deposition time. Parameters (e.g. annealing temperature and annealing time) which helps quantum dots (QDs) to form during post deposition annealing are varied to control the size of QDs. The fabricated device is examined for physical and optical properties using spectroscopic techniques such as a surface profiler, SEM, FTIR, UV-Vis, and PLen_US
dc.description.sponsorshipRF Sputtering, Annealing, Si-QDs, Intermediate layer, SRO layer, Deposition rate, O2 gas flowen_US
dc.subjectRF Sputteringen_US
dc.subjectAnnealingen_US
dc.subjectSi-QDs, Intermediate layer,en_US
dc.subjectSRO layeren_US
dc.subjectDeposition rateen_US
dc.subjectO2 gas flowen_US
dc.titleEffect of Sputtering and Annealing Parameters on Properties of Silicon Quantum Dot Matrixen_US
dc.typeArticleen_US
Appears in Collections:Conference Papers

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