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http://hdl.handle.net/2080/2693
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DC Field | Value | Language |
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dc.contributor.author | Pradhan, K P | - |
dc.contributor.author | Sahu, P K | - |
dc.date.accessioned | 2017-04-05T12:41:31Z | - |
dc.date.available | 2017-04-05T12:41:31Z | - |
dc.date.issued | 2017-02 | - |
dc.identifier.citation | 6th International Conference On Advances in Computing, Control and Networking (ACCN 2017), Bangkok, Thailand, 25-26 February 2017 | en_US |
dc.identifier.isbn | 978-1-63248-117-7 | - |
dc.identifier.uri | 10.15224/ 978-1-63248-117-7-54 | - |
dc.identifier.uri | http://hdl.handle.net/2080/2693 | - |
dc.description | Copyright for this paper belongs to proceeding pubisher | en_US |
dc.description.abstract | Double Gate FinFET devices are suitable for nano electronic circuits due to better scalability, higher on-current (Ion), improved Sub-threshold Slope (SS) and undoped body (no random dopant fluctuation). Body thickness (TSi ) increases the gate control over the channel resulting in reduced short channel effects (SCEs). Thin Tsi increases the quantum confinement of charge, resulting increased threshold-voltage (Vth), and hence, reduced performance. In this work, we have varied the process parameters like channel length (Lg ) in presence of noise and analyzed various parameters. Significant variation in the noise spectral density has been observed, which is related to the random occurrence of excess Lorentzian components (1/f2 -like nature) associated with generation–recombination (GR) noise. | en_US |
dc.subject | Double Gate FinFET | en_US |
dc.subject | Sub-threshold Slope (SS) | en_US |
dc.subject | Short Channel Effects (SCEs) | en_US |
dc.subject | Quantum confinement | en_US |
dc.subject | Noise spectral density | en_US |
dc.title | RF and Noise performance exploration of Double Gate FinFET | en_US |
dc.type | Article | en_US |
Appears in Collections: | Conference Papers |
Files in This Item:
File | Description | Size | Format | |
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2017_ACCN_PKSahu_RF.pdf | 499.01 kB | Adobe PDF | View/Open |
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