Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/2693
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dc.contributor.authorPradhan, K P-
dc.contributor.authorSahu, P K-
dc.date.accessioned2017-04-05T12:41:31Z-
dc.date.available2017-04-05T12:41:31Z-
dc.date.issued2017-02-
dc.identifier.citation6th International Conference On Advances in Computing, Control and Networking (ACCN 2017), Bangkok, Thailand, 25-26 February 2017en_US
dc.identifier.isbn978-1-63248-117-7-
dc.identifier.uri10.15224/ 978-1-63248-117-7-54-
dc.identifier.urihttp://hdl.handle.net/2080/2693-
dc.descriptionCopyright for this paper belongs to proceeding pubisheren_US
dc.description.abstractDouble Gate FinFET devices are suitable for nano electronic circuits due to better scalability, higher on-current (Ion), improved Sub-threshold Slope (SS) and undoped body (no random dopant fluctuation). Body thickness (TSi ) increases the gate control over the channel resulting in reduced short channel effects (SCEs). Thin Tsi increases the quantum confinement of charge, resulting increased threshold-voltage (Vth), and hence, reduced performance. In this work, we have varied the process parameters like channel length (Lg ) in presence of noise and analyzed various parameters. Significant variation in the noise spectral density has been observed, which is related to the random occurrence of excess Lorentzian components (1/f2 -like nature) associated with generation–recombination (GR) noise.en_US
dc.subjectDouble Gate FinFETen_US
dc.subjectSub-threshold Slope (SS)en_US
dc.subjectShort Channel Effects (SCEs)en_US
dc.subjectQuantum confinementen_US
dc.subjectNoise spectral densityen_US
dc.titleRF and Noise performance exploration of Double Gate FinFETen_US
dc.typeArticleen_US
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