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http://hdl.handle.net/2080/2693
Title: | RF and Noise performance exploration of Double Gate FinFET |
Authors: | Pradhan, K P Sahu, P K |
Keywords: | Double Gate FinFET Sub-threshold Slope (SS) Short Channel Effects (SCEs) Quantum confinement Noise spectral density |
Issue Date: | Feb-2017 |
Citation: | 6th International Conference On Advances in Computing, Control and Networking (ACCN 2017), Bangkok, Thailand, 25-26 February 2017 |
Abstract: | Double Gate FinFET devices are suitable for nano electronic circuits due to better scalability, higher on-current (Ion), improved Sub-threshold Slope (SS) and undoped body (no random dopant fluctuation). Body thickness (TSi ) increases the gate control over the channel resulting in reduced short channel effects (SCEs). Thin Tsi increases the quantum confinement of charge, resulting increased threshold-voltage (Vth), and hence, reduced performance. In this work, we have varied the process parameters like channel length (Lg ) in presence of noise and analyzed various parameters. Significant variation in the noise spectral density has been observed, which is related to the random occurrence of excess Lorentzian components (1/f2 -like nature) associated with generation–recombination (GR) noise. |
Description: | Copyright for this paper belongs to proceeding pubisher |
URI: | 10.15224/ 978-1-63248-117-7-54 http://hdl.handle.net/2080/2693 |
ISBN: | 978-1-63248-117-7 |
Appears in Collections: | Conference Papers |
Files in This Item:
File | Description | Size | Format | |
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2017_ACCN_PKSahu_RF.pdf | 499.01 kB | Adobe PDF | View/Open |
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