Structural, Morphological and Electrical Characterization of rGO_P3HT Composite Film for Photovoltaic Applications

Abstract

Interesting properties like low cost processing, green, flexible, solution processable etc. of organic semiconductors have attracted the attention of researcher for the next generation optoelectronics applications. Reduced graphene oxide (rGO) has been prepared by modified Hummers’ method followed by reduction using hydrazine hydrate as reducing agent. rGO incorporated Poly[3-hexylthiophene-2,5-diyl] (P3HT) composite films has been fabricated processing followed by spin coating method using 1,2-dichlorobenzene as solvent. Structural and morphological characterization of the composite film has been analyzed by XRD, SEM and FESEM. The reduced graphene oxide (rGO) was observed to be well dispersed in the polymer matrix. Functional characteristics and interaction between filler and host P3HT matrix has been studied by Fourier transform infrared spectroscopy (FTIR) and Raman characterization. An increase in electrical conductivity has been observed for the rGO incorporated film. Applicability of the composite for different optoelectronic devices has been illustrated by using cyclic-voltammetry characterization. Improvement in electrical characteristics of the composite can be attributed to rGO network in the composite films.