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http://hdl.handle.net/2080/2623
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DC Field | Value | Language |
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dc.contributor.author | Tripathy, N | - |
dc.contributor.author | Das, K C | - |
dc.contributor.author | Ghosh, S P | - |
dc.contributor.author | Bose, G | - |
dc.contributor.author | Kar, J P | - |
dc.date.accessioned | 2017-01-17T05:44:03Z | - |
dc.date.available | 2017-01-17T05:44:03Z | - |
dc.date.issued | 2016-11 | - |
dc.identifier.citation | 6th National Conference on Processing and Characterization of Materials, Department of Metallurgical and Materials Engineering, National Institute of Technology Rourkela, Odisha, India, 9-12 December 2016 | en_US |
dc.identifier.uri | http://hdl.handle.net/2080/2623 | - |
dc.description | Copyright belongs to the proceeding publisher | en_US |
dc.description.abstract | CaCu3Ti4O12 (CCTO) thin films have been deposited by RF magnetron sputtering on silicon substrates at room temperature. As-deposited thin films were subjected to rapid thermal annealing (RTA) at different temperatures ranging from 850°C to 1000°C. XRD and capacitance - voltage studies indicate that the structural and electrical properties of CCTO thin film strongly depend upon the annealing temperature. XRD pattern of CCTO thin film annealed at 950°C reveals the polycrystalline nature with evolutions of microstructures. Electrical properties of the dielectric films were investigated by fabricating Al/CCTO/Si metal oxide semiconductor structure. Electrical properties were found to be deteriorated with increasing in annealing temperature. | en_US |
dc.subject | RTA | en_US |
dc.subject | X-ray diffraction | en_US |
dc.subject | FESEM | en_US |
dc.subject | C-V measurement | en_US |
dc.title | Effect of Rapid Thermal Annealing on the Structural and Electrical Properties of RF Sputtered CCTO Thin Film | en_US |
dc.type | Article | en_US |
Appears in Collections: | Conference Papers |
Files in This Item:
File | Description | Size | Format | |
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2016_NCPCM_NTripathy_Effect.pdf | 462.19 kB | Adobe PDF | View/Open |
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