Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/2622
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dc.contributor.authorGhosh, S P-
dc.contributor.authorDas, K C-
dc.contributor.authorTripathy, N-
dc.contributor.authorMoharana, A-
dc.contributor.authorAdhikari, A-
dc.contributor.authorBose, G-
dc.contributor.authorKim, D H-
dc.contributor.authorLee, T I-
dc.contributor.authorMyoung, J M-
dc.contributor.authorKar, J P-
dc.date.accessioned2017-01-17T05:43:47Z-
dc.date.available2017-01-17T05:43:47Z-
dc.date.issued2016-11-
dc.identifier.citation6th National Conference on Processing and Characterization of Materials, Department of Metallurgical and Materials Engineering, National Institute of Technology Rourkela, Odisha, India, 9-12 December 2016en_US
dc.identifier.urihttp://hdl.handle.net/2080/2622-
dc.descriptionCopyright belongs to the proceeding publisheren_US
dc.description.abstractThis work mainly focused on the synthesis of copper doped zinc oxide nanowires by hydrothermal method, their characterization and their ultraviolet (UV) light sensing response at room temperature. The structural and morphological characterization was carried out using X-ray diffraction and scanning electron microscopy. Enhanced ultraviolet (UV) photodetection property has been achieved for a dopant concentration of 2.5wt% and 5wt% showing UV photosensitivity values (photo-to-dark current ratio) of around 800 and 1800, respectively. This is an order of magnitude higher than the undoped ZnO nanowires. High photocurrent gain is attributed to the trapping of carriers under dark and detrapping them under UV illumination by Cu-related defects. Enhancement in photosensitivity indicates that Cudoped ZnO nanowires are promising candidates for UV photodetection applications.en_US
dc.subjectCopperen_US
dc.subjectDopeden_US
dc.subjectNanowireen_US
dc.subjectUltravioleten_US
dc.subjectPhotodetectionen_US
dc.subjectZinc Oxideen_US
dc.titleSynthesis of Copper Doped Zinc Oxide Nanowires with Enhanced Ultraviolet Photoresponse Behavioren_US
dc.typeArticleen_US
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