Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/2457
Full metadata record
DC FieldValueLanguage
dc.contributor.authorSingh, A K-
dc.date.accessioned2016-03-01T12:56:08Z-
dc.date.available2016-03-01T12:56:08Z-
dc.date.issued2016-01-
dc.identifier.citation103rd Indian Science Congress, Mysore, India, 3-7 Jan 2016en_US
dc.identifier.urihttp://hdl.handle.net/2080/2457-
dc.description.abstractPhase pure polycrystalline Bi2Fe4O9 is prepared using the conventional solid state reaction route. X-ray diffraction (XRD) reveals Bi2Fe4O9 to possess an orthorhombic crystal structure with space group ‘Pbam’. Optical characterization confirms Bi2Fe4O9 to be a direct band gap material with Eg ~ 1.5 eV. Magnetization measurement shows compound to be antiferromagnetic (AFM) with AFM transition temperature ~150 K. The dielectric response of the compound was recorded in the temperature range 10-300 K with the probing frequency from 500 Hz-5 MHz. Here, we report remarkable magnetic field tunable dielectric properties of polycrystalline Bi2Fe4O9 near its AFM transition temperature. Thus, Bi2Fe4O9 can be further stimulated for various other magnetic field sensors, multiple state memory and other ferroelectric applications.en_US
dc.subjectMagneoelectric couplingen_US
dc.subjectMagnetic field sensorsen_US
dc.subjectMagnetizationen_US
dc.subjectDielectric constanten_US
dc.titleBi2Fe4O9 as a Potential Candidate for Multiple State Memory and Magnetic Field Sensor Applicationen_US
dc.typePresentationen_US
Appears in Collections:Conference Papers

Files in This Item:
File Description SizeFormat 
2016_103rd_ISC_SinghAK.pdf2.62 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.