Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/2418
Title: Power Efficient Design of a Novel SRAM Cell with Higher Write Ability
Authors: Nayak, D
Acharya, D P
Mahapatra, K K
Keywords: Short-circuit current
Low power
Dynamic power
N-Curve
SVNM
SINM
SPNM
WTV
WTI
WTP
Issue Date: Dec-2015
Publisher: IEEE
Citation: 12th Annual IEEE India Conference (INDICON 2015), Jamia Nagar, New Delhi, 17-20 Dec 2015
Abstract: The modern high-performance portable communication devices are the key to make the world more inclusive than before. There is a great demand for highperformance SOC inside the high-performance portable devices. According to ITRS and current research, on chip memory technology plays a great role in the SOC performance. Hence enhancing on-chip memory performance will lead to performance enhancement of the device. A novel SRAM cell is designed which reduces the total power consumption by 15.33%. It also increases the write-ability by 63.61% with respect to the conventional 6T-SRAM cell. It blocks the short-circuit current during state transition to reduce the dynamic power consumption. During a write operation, it initiates the feedback loop process for data latching, earlier than the 6T-SRAM cell which increases the write-ability of the proposed cell by a large amount. A thorough analysis about power consumption, writeability and physical layout design of the proposed cell array is carried out and compared with that of a conventional 6T-SRAM cell array.
Description: Copyright for this paper belongs to proceeding publisher
URI: http://hdl.handle.net/2080/2418
Appears in Collections:Conference Papers

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