Threshold Voltage Modeling of Recessed-Source/Drain (Re-S/D) SOI MOSFETs with Vertical Gaussian Doping Profile

Abstract

In the present work, an attempt has been made to model the threshold voltage of Re-S/D SOI MOSFETs with vertical Gaussian doping profile in the channel. The two dimensional (2D) Poisson’s equation has been solved in the channel region of the device considering the appropriate boundary conditions. We have adopted the so called “virtual cathode approach” for the threshold voltage modeling. The developed analytical model predicts the threshold voltage of the device for wide variations in the device parameters. To verify the accuracy of the present analytical model, the model results are compared by ATLASTM device simulator.