Please use this identifier to cite or link to this item:
http://hdl.handle.net/2080/2280
Title: | Virtual Fabrication of Short-Channel RecessedSource/Drain (Re-S/D) SOI MOSFETs |
Authors: | Dasari, S Saramekala, G K Tiwari, P K |
Keywords: | Short Channel Effects (SCEs) RecessedSource/Drain (Re-S/D) thickness Electrical characteristics |
Issue Date: | Feb-2015 |
Citation: | Proceedings of International Symposium on Semiconductor Materials and Devices (ISSMD-3),Crystal Crystal Growth Centre, Anna University, Chennai. 2-5 February 2015. |
Abstract: | This paper describes process and device simulation results of short-channel Recessed Source/Drain (Re-S/D) SOI MOSFETs. A Re-S/D SOI MOSFET with 30nm channel length, and 10nm channel thickness, is virtually fabricated with reduced short channel effects (SCEs) and low source/drain series resistance. The processing steps, which are required to obtain the structure of the Re-S/D SOI MOSFET, are proposed and explained in detail. The electrical characteristic Ids versus drain to source voltage VDS is obtained for different values of VGS and Re-S/D thickness (trsd). The device is virtually fabricated using 2D process simulator ATHENA, followed by electrical characterization which is done with the help of device simulator ATLASTM from SILVACO. |
Description: | Copyright belongs to the Proceeding of Publisher |
URI: | http://hdl.handle.net/2080/2280 |
Appears in Collections: | Conference Papers |
Files in This Item:
File | Description | Size | Format | |
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ISSMD conference paper ....pdf | 490.66 kB | Adobe PDF | View/Open |
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