Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/2194
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dc.contributor.authorSaramekala, G K-
dc.contributor.authorTiwari, P K-
dc.date.accessioned2014-10-22T12:03:20Z-
dc.date.available2014-10-22T12:03:20Z-
dc.date.issued2014-09-
dc.identifier.citationEighth Asia International conference on Mathematical Modelling and Computer Simulation, Asia Modelling Symposium , 23 September 2014.Taipeien
dc.identifier.urihttp://hdl.handle.net/2080/2194-
dc.descriptionCopyright belongs to Proceeding publishersen
dc.description.abstractAn analytical surface-potential based subthreshold current model for short-channel recessed-source/ drain (Re-S/D) SOI MOSFETs with high-k dielectric is presented in this paper. The two-dimensional (2D) Poisson’s equation has been solved in the channel region with suitable boundary conditions in order to determine the surface potential. The diffusion component of current density is considered for the subthreshold current modeling. The impact of EOT (Effective Oxide Thickness) ( ox t ), channel Length ( L ), gate-dielectric constant ( o x ) on subthreshold current has been investigated. The proposed model has been validated by comparing the analytical results with numerical simulation data obtained from ATLASTM, a two dimensional device simulator from SILVACO.en
dc.format.extent367545 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoen-
dc.publisherAsia Modelling Symposiumen
dc.subjectrecessed-sourceen
dc.subjectdrain (Re-S/D)en
dc.subjectsubthreshold current;en
dc.subjectmimimum surface potentialen
dc.subjectgate dielectric constanten
dc.titleA Two-Dimensional Subthreshold Current Model of Recessed-Source/ Drain (Re- S/D) SOI MOSFETs with High-k Dielectricen
dc.typeArticleen
Appears in Collections:Conference Papers

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