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http://hdl.handle.net/2080/2094
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DC Field | Value | Language |
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dc.contributor.author | Nayak, D | - |
dc.contributor.author | Acharya, D P | - |
dc.contributor.author | Rout, P K | - |
dc.contributor.author | Mahapatra, K K | - |
dc.date.accessioned | 2014-02-21T04:44:08Z | - |
dc.date.available | 2014-02-21T04:44:08Z | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | International Conference on Electronics and Communication System (ICECS-2014), 14 February 2014, Karpagam College of Engineering, Karpagam, Tamilnadu | en |
dc.identifier.uri | http://hdl.handle.net/2080/2094 | - |
dc.description | Copyright belongs to the IEEE | en |
dc.description.abstract | The high demand of embedding more and more functionality in a single chip has enforced the use of scaling. As scaling drastically reduce the channel length the leakage current also increases significantly which increases the static power dissipation. A novel 8T-SRAM cell (Leakage Current Reduced SRAM cell) is proposed which reduces the leakage power dissipation significantly in comparison to the conventional 6T-SRAM cell. The cell is designed using GPDK-90 nm technology library and simulated under Cadence Virtuoso design environment. The proposed cell uses a lower voltage than Vdd during standby mode which leads to a reduction of leakage current and hence the static power consumption. The lower voltage is generated using an NMOS which creates a threshold voltage drop when transfer a high logic. The power consumption is found to be 25.02 % lesser than that of conventional six transistors SRAM cell .The stability and the write ability are measured using the N-Curve technique. | en |
dc.format.extent | 386199 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | en | - |
dc.publisher | IEEE | en |
dc.subject | Leakage current | en |
dc.subject | Leakage power | en |
dc.subject | Static power | en |
dc.subject | Low power | en |
dc.subject | stability | en |
dc.subject | N-Curve | en |
dc.subject | SVNM | en |
dc.subject | SINM | en |
dc.subject | WTV | en |
dc.subject | WTI | en |
dc.title | Design of Low-Leakage and High Stable Proposed SRAM cell Structure | en |
dc.type | Article | en |
Appears in Collections: | Conference Papers |
Files in This Item:
File | Description | Size | Format | |
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Design of Low-Leakage and High Stable.pdf | 377.15 kB | Adobe PDF | View/Open |
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