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http://hdl.handle.net/2080/1971
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DC Field | Value | Language |
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dc.contributor.author | Vishwakarma, P N | - |
dc.date.accessioned | 2013-07-29T04:31:51Z | - |
dc.date.available | 2013-07-29T04:31:51Z | - |
dc.date.issued | 2008-11 | - |
dc.identifier.citation | Solid State Communications 149 (2009) 115-120 | en |
dc.identifier.uri | http://hdl.handle.net/2080/1971 | - |
dc.description | Copyright for this paper belongs to the Elsevier Ltd. | en |
dc.description.abstract | Experimental results on frequency and temperature dependence of ac conduction in boron doped amorphous carbon films are analyzed in the framework of available microscopic models. Depending on the response, the conductivity plot is divided into three regimes (low frequency high temperature; moderate frequency intermediate temperature; high frequency low temperature) and the data in the respective regimes are corroborated with the various theoretical models accordingly. The conductivity data at high frequency and low temperature suggests that relaxation via quantum mechanical tunneling might be the dominant conduction mechanism. At intermediate temperatures and moderate frequencies, the conductivity data is in good agreement with extended pair approximation model with interaction correction. Signature of enhanced interaction effect is observed at low temperature. | en |
dc.format.extent | 3825351 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | en | - |
dc.publisher | Elsevier Ltd. | en |
dc.subject | Disordered systems | en |
dc.subject | Thin films | en |
dc.subject | Electron-electron interactions | en |
dc.title | Ac conductivity in boron doped amorphous carbon films | en |
dc.type | Article | en |
Appears in Collections: | Journal Articles |
Files in This Item:
File | Description | Size | Format | |
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SSC_final.pdf | 743.89 kB | Adobe PDF | View/Open |
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