Please use this identifier to cite or link to this item:
http://hdl.handle.net/2080/1909| Title: | A Simulation-based Study of Gate Misalignment Effects in Triple-Material Double-Gate (TM DG) MOSFETs |
| Authors: | Sarangi, S Bhushan, S Gopi Krishna, S Santra, A |
| Keywords: | TMDG Gate Misalignment Short Channel Effects DIBL |
| Issue Date: | Mar-2013 |
| Citation: | International Multi Conference on Automation, Computing, Control, Communication and Compressed Sensing (iMac4s-2013). Kottayam, Kerala, March 22 – 23, 2013 |
| Abstract: | In this work, a simulation based study of gate misalignment effects in triple- material double-gate (TMDG) MOSFETs is presented. An attempt is made to analyze the effects of gate misalignment on the front and back gates surface potential considering the misalignment for both the source and drain side. The surface potential profile for misaligned gate TMDG MOSFET is compared with its double and single material counterparts to predict the electrical parameters like threshold voltage roll-off. The surface potential profile is obtained through 2-D simulations by ATLASTM from Silvaco Inc. |
| Description: | Copyright belongs to the Proceeding of Publisher |
| URI: | http://hdl.handle.net/2080/1909 |
| Appears in Collections: | Conference Papers |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| SANTUNU_CONFERENCE_PAPER_KERALA.pdf | 521.51 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.