A Simulation-based Study of Gate Misalignment Effects in Triple-Material Double-Gate (TM DG) MOSFETs

Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/1909

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DC Field	Value	Language
dc.contributor.author	Sarangi, S	-
dc.contributor.author	Bhushan, S	-
dc.contributor.author	Gopi Krishna, S	-
dc.contributor.author	Santra, A	-
dc.date.accessioned	2013-04-05T11:04:29Z	-
dc.date.available	2013-04-05T11:04:29Z	-
dc.date.issued	2013-03	-
dc.identifier.citation	International Multi Conference on Automation, Computing, Control, Communication and Compressed Sensing (iMac4s-2013). Kottayam, Kerala, March 22 – 23, 2013	en
dc.identifier.uri	http://hdl.handle.net/2080/1909	-
dc.description	Copyright belongs to the Proceeding of Publisher	en
dc.description.abstract	In this work, a simulation based study of gate misalignment effects in triple- material double-gate (TMDG) MOSFETs is presented. An attempt is made to analyze the effects of gate misalignment on the front and back gates surface potential considering the misalignment for both the source and drain side. The surface potential profile for misaligned gate TMDG MOSFET is compared with its double and single material counterparts to predict the electrical parameters like threshold voltage roll-off. The surface potential profile is obtained through 2-D simulations by ATLASTM from Silvaco Inc.	en
dc.format.extent	534027 bytes	-
dc.format.mimetype	application/pdf	-
dc.language.iso	en_US	-
dc.subject	TMDG	en
dc.subject	Gate Misalignment	en
dc.subject	Short Channel Effects	en
dc.subject	DIBL	en
dc.title	A Simulation-based Study of Gate Misalignment Effects in Triple-Material Double-Gate (TM DG) MOSFETs	en
dc.type	Article	en
Appears in Collections:	Conference Papers

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