An Analytical Study of Short-Channel Effects of Strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFETs Including Interface Charges

Abstract

In this paper, an analytical threshold voltage model is developed for short-channel Strained-Si (s-Si) on Silicon- Germanium-on-insulator (SGOI) MOSFET including the effects of interface charges. The two-dimensional Poisson’s equation is solved in the undamaged and damaged strained-Si and relaxed Si1-xGex regions to find out the surface potential minimum for calculating the threshold voltage. The results obtained from the developed model have been compared with the numerical simulation results obtained using ATLASTM from Silvaco. The extent of influence of hot carriers induced effects in terms of interface charges and damaged s-Si/front gate oxide interface on threshold voltage roll-off and drain induced barrier lowering (DIBL) have been studied.