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Please use this identifier to cite or link to this item: http://hdl.handle.net/2080/102
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dc.contributor.authorRout, S K-
dc.contributor.authorPanigrahi, S-
dc.contributor.authorBera, J-
dc.date.accessioned2005-07-04T08:59:41Z-
dc.date.available2005-07-04T08:59:41Z-
dc.date.issued2005-06-
dc.identifier.citationBulletin of Material Science, Vol 28, No 3, P 275-279en
dc.identifier.urihttp://hdl.handle.net/2080/102-
dc.descriptionCopyright for this article belongs to Indian Academy of Sciencesen
dc.description.abstractThe ceramics, SrTiO3 (ST) and 04, 08 atom% Ni doped SrTiO3, were prepared by solid state re-action route. The average grain size of undoped and doped samples was measured and found to be 12, 19 and 37 µm, respectively. The impedance measurements were conducted at 400–600°C to separate grain and grain boundary contributions. The grain and grain boundaries relaxation frequencies were shifted to higher fre-quency with temperature. Bulk resistance of doped and undoped ST ceramics was more or less the same. Single grain boundary resistance of doped sample was higher than that of undoped one, indicating that GB resis-tance increases with acceptor doping. Activation energies were calculated to confirm the same.en
dc.format.extent449182 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoen-
dc.publisherIndian Academy of Sciencesen
dc.subjectNi doped SrTiO3en
dc.subjectimpedance spectroscopyen
dc.subjectgrain boundaryen
dc.subjectacceptoren
dc.titleStudy on electrical properties of Ni-doped SrTiO3 ceramics using impedance spectroscopyen
dc.typeArticleen
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